Angled etching of GaAs/AlGaAs by conventional Cl2 reactive ion etching
Angled etching of GaAs/AlGaAs by conventional Cl2 reactive ion etching
复制标题
通过传统 Cl2 反应离子蚀刻对 GaAs/AlGaAs 进行成角度蚀刻
DOI：
10.1063/1.100204
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发表时间：
1988
影响因子：
4
通讯作者：
J. Merz
中科院分区：
文献类型：
--
作者：
T. Takamori;L. Coldren;J. Merz
在传统的 Cl2 反应离子蚀刻系统中实现了 GaAs 和 GaAs/AlGaAs 双异质结构的成角度蚀刻。一种新的成角度的支架具有凹槽结构，用于消除基板周围离子轨迹的弯曲。刻面角度由凹槽壁的角度精确确定。通过使用负载锁定系统和三级光刻胶掩模获得了相等的蚀刻速率和光滑的刻面。这种简单的干法蚀刻工艺适用于形成光电集成电路，例如表面发射激光器。
Angled etching of GaAs and GaAs/AlGaAs double heterostructures was achieved in a conventional Cl2 reactive ion etching system. A new angled holder, which has a recessed groove structure where the substrate is positioned, was used to eliminate bending of the ion trajectory around the substrate. The facet angle is accurately determined by the angle of the groove wall. Equal etching rates and smooth facets were obtained by using a load‐locked system and trilevel photoresist masking. This simple dry etch process is suitable for the formation of optoelectronic integrated circuits such as surface‐emitting lasers.