Degradation in injection lasers
Degradation in injection lasers
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注射激光器的退化
DOI：
10.1109/jqe.1975.1068633
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发表时间：
1975
影响因子：
2.5
通讯作者：
G. Woolhouse
中科院分区：
文献类型：
--
作者：
G. Woolhouse
考虑了注入激光器中通过 1) 电迁移和 2) 热迁移预期的爬升网络。结果表明，涉及电迁移和位错管扩散的模型可以解释实验结果[1]、[2]、[7]。据预测，热迁移在光泵浦器件中可能很重要。进一步表明，弹性应变本身并不是造成降解的原因。当数值减少适当时，使用 GaAs-Ga 1-x Al x As 系统的参数。 GaAs 中管道扩散的活化能估计为 0.75 eV，并且该过程被认为是由砷空位的扩散控制的。
The climb networks to be expected in an injection laser through 1) electromigration and 2) thermomigration are considered. It is shown that a model involving electromigration and dislocation pipe diffusion can explain the experimental results [1], [2], [7]. It is predicted that thermomigration may be important in optically pumped devices. It is further shown that elastic strain, per se, cannot be responsible for the degradation. Where numerical reduction is appropriate, parameters of the GaAs-Ga 1-x Al x As system are used. The activation energy for pipe diffusion in GaAs is estimated to be 0.75 eV and the process is believed to be controlled by the diffusion of arsenic vacancies.