Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s
Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s
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DOI：
10.1049/el.2009.0552
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发表时间：
2009-05
影响因子：
1.1
通讯作者：
S. Blokhin;J. Lott;A. Mutig;G. Fiol;N. Ledentsov;M. Maximov;A. Nadtochiy;V. Shchukin;D. Bimberg
中科院分区：
文献类型：
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作者：
S. Blokhin;J. Lott;A. Mutig;G. Fiol;N. Ledentsov;M. Maximov;A. Nadtochiy;V. Shchukin;D. Bimberg
实现了氧化物限制的850 nm垂直腔面发射激光器，工作速率为40 Gbit/s，电流密度约为10 kA/cm 2。该器件的解卷积上升时间低于10 ps，并且在高达100 ℃的温度下几乎不敏感。
Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s at current densities ~10 kA/cm 2 are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100degC.