Anisotropic field effect mobility in single crystal pentacene
Anisotropic field effect mobility in single crystal pentacene
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DOI：
10.1063/1.2216400
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发表时间：
2006-06-19
影响因子：
4
通讯作者：
Park, Y. W.
中科院分区：
文献类型：
--
作者：
Lee, J. Y.;Roth, S.;Park, Y. W.
在Si/SiO2衬底上设计扇形电极来测量独立式单晶并五苯的各向异性场效应迁移率。通过将单晶并五苯放置在预图案化的电极上来制造场效应晶体管。通过施加压力增强电极和单晶并五苯之间的接触。单晶并五苯中场效应迁移率的角度依赖性表现出显着的各向异性行为。室温下最高迁移率值估计与 2.3 cm(2)/V s 相似。 (c) 2006 年美国物理研究所。
Fan-shaped electrodes were designed on Si/SiO2 substrate to measure the anisotropic field effect mobility in freestanding single crystal pentacene. Field effect transistor was fabricated by placing single crystal pentacene on the prepatterned electrodes. The contact between the electrodes and single crystal pentacene was enhanced by applying pressure. Angle dependence of field effect mobility in single crystal pentacene showed remarkably anisotropic behavior. The highest mobility value was estimated to be similar to 2.3 cm(2)/V s at room temperature. (c) 2006 American Institute of Physics.