Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
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DOI：
10.1038/nnano.2007.151
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发表时间：
2007-06-01
影响因子：
38.3
通讯作者：
Janes, David B.
中科院分区：
文献类型：
--
作者：
Ju, Sanghyun;Facchetti, Antonio;Janes, David B.
光学透明和机械柔性电子电路的开发是开发下一代显示技术（包括“透视”和舒适产品）的重要一步。纳米线晶体管（NWT）在未来的显示设备中特别受关注，因为与相同材料制成的体晶体管或薄膜晶体管相比，其载流子迁移率高，在低温下加工的前景与塑料基板兼容，以及其光学透明度和固有的机械灵活性。在此，我们报告了在玻璃和柔性塑料基板上制造的完全透明的 In2O3 和 ZnO NWT，表现出高性能 n 型晶体管特性，光学透明度接近 82%。这些 NWT 作为有源矩阵有机发光二极管 (AMOLED) 显示器中的像素开关和驱动晶体管应该很有吸引力。整个像素区域的透明度应显着提高有源矩阵阵列的孔径比效率，从而显着降低功耗。
The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In2O3 and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with similar to 82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.