Nanoparticles of Si-C-N from low temperature RF plasmas : selective size, composition and structure
Nanoparticles of Si-C-N from low temperature RF plasmas : selective size, composition and structure
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来自低温射频等离子体的 Si-C-N 纳米颗粒：选择性尺寸、成分和结构
DOI：
10.1016/s0169-4332(98)00909-x
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
Enric Bertran
中科院分区：
文献类型：
--
作者：
G. Viera;E. García;J. Costa;J. Andújar;Enric Bertran
硅烷基射频等离子体气相沉积用于制备纳米结构材料。根据放电条件的不同，可以获得具有先进陶瓷应用潜力的超细合金粉末（Si-C-N），或者在纳米颗粒存在下生长的纳米结构薄膜。本文研究了在SiH4、CH4、nh3和Ar等离子体中，基于Si-C-N体系合成纳米颗粒的方法。在粒子快速发育的条件下，制备了具有控制平均粒径的超细准单分散粉末颗粒。在颗粒凝固开始之前，得到了小于10 nm的非凝聚无定形团簇。
Silane-based rf plasma CVD is used to produce nanostructured materials. Depending on the discharge conditions, either ultrafine powder of alloys (Si–C–N), with potential applications for advanced ceramics, or nanostructured thin films grown in the presence of nanoparticles, can be obtained. The present study deals with the synthesis of nanoparticles based on the Si–C–N system in plasmas of SiH4, CH4, NH3and Ar. Ultrafine quasi-monodisperse powder particles of controlled mean size were produced in conditions of fast particle development. Before the onset of particle coagulation, non-agglomerated amorphous clusters smaller than 10 nm were obtained.