Low-Temperature Atomic Layer Deposition of Cobalt Oxide as an Effective Catalyst for Photoelectrochemical Water-Splitting Devices
Low-Temperature Atomic Layer Deposition of Cobalt Oxide as an Effective Catalyst for Photoelectrochemical Water-Splitting Devices
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DOI：
10.1021/acs.chemmater.6b05346
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发表时间：
2017-07-25
影响因子：
8.6
通讯作者：
Devi, Anjana
中科院分区：
文献类型：
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作者：
Kim, Jiyeon;Iivonen, Tomi;Devi, Anjana
我们开发了一种低温原子层沉积（ALD）工艺，以[Co（（tBu 2）DAD）（2）]和臭氧为共试剂，在120 ℃下沉积晶态和相纯的尖晶石型钴氧化物（Co 3 O 4）薄膜。采用X射线衍射、紫外-可见光谱、原子力显微镜、场发射扫描电子显微镜、X射线光电子能谱和飞行时间弹性反冲探测等测试手段对薄膜的结构和性能进行了表征。所沉积的Co 3 O 4薄膜是具有少量杂质的结晶（
We have developed a low-temperature atomic layer deposition (ALD) process for depositing crystalline and phase pure spinel cobalt oxide (Co3O4) films at 120 degrees C using [Co((tBu2)DAD)(2)] and ozone as coreagent. X-ray diffraction, UV-vis spectroscopy, atomic force microscopy, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis were performed to characterize the structure and properties of the films. The as deposited Co3O4 films are crystalline with a low amount of impurities (