Doping level and work function control in oxidative chemical vapor deposited poly (3,4-ethylenedioxythiophene)
Doping level and work function control in oxidative chemical vapor deposited poly (3,4-ethylenedioxythiophene)
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DOI：
10.1063/1.2721376
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发表时间：
2007-04-09
影响因子：
4
通讯作者：
Olivetti, Elsa A.
中科院分区：
文献类型：
--
作者：
Im, Sung Gap;Gleason, Karen K.;Olivetti, Elsa A.
采用氧化化学气相沉积（oCVD）方法制备了聚（3，4-乙撑二氧噻吩）（PEDOT）薄膜，实现了对掺杂水平和功函数的控制。表面分析揭示了oCVD薄膜表面和体相成分的等效性。oCVD PEDOT聚合物链仅掺杂有Cl-离子。通过增加用于沉积的衬底温度，掺杂水平从17单调增加到33 at. %，导致将功函数从5.1调整到5.4eV的相应能力。有机化学气相沉积PEDOT的掺杂水平和功函数的可控性为有机器件提供了巨大的潜在优势。(c)2007年，美国物理学会。
Control over doping level and work function is achieved for poly(3,4-ethylenedioxythiophene) (PEDOT) films deposited by oxidative chemical vapor deposition (oCVD). Surface analysis reveals the equivalence of the surface and bulk compositions for the oCVD films. The oCVD PEDOT polymer chains doped solely with Cl- ions. By increasing the substrate temperature used for deposition, the doping level was monotonically increased from 17 to 33 at. %, resulting in a corresponding ability to tune the work function from 5.1 to 5.4 eV. The controllability of doping level and work function of oCVD PEDOT offers great potential advantages for organic devices. (c) 2007 American Institute of Physics.