Preparation of VO2 films by organometallic chemical vapour deposition and dip-coating
Preparation of VO2 films by organometallic chemical vapour deposition and dip-coating
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DOI：
10.1007/bf00660953
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发表时间：
1989
影响因子：
4.5
通讯作者：
Y. Takahashi;M. Kanamori;H. Hashimoto;Y. Moritani;Y. Masuda
中科院分区：
文献类型：
--
作者：
Y. Takahashi;M. Kanamori;H. Hashimoto;Y. Moritani;Y. Masuda
以三异丁氧基钒为原料，采用低压金属有机化学气相沉积(OMCVD)和浸渍法制备了VO2薄膜。在OMCVD中，由细针状晶体组成的不连续VO2薄膜是在非常有限的条件下形成的，温度在600℃左右，氧气流量为0.2-0.5 cm~3秒−-1。然而，通过在300-700℃无氧条件下沉积，然后在500℃氮气中热处理2 h，可以生长出非常均匀和紧密堆积的VO2薄膜。在60-70℃，薄膜表现出急剧的半导体到金属的转变，伴随着电阻率变化四到五个数量级。VO(O-i-Bu)3-H2O-I-PROH体系经两步热处理(300℃氮气保温1h，500℃氮气保温2 h)后，形成了均匀的(0 1 1)取向的VO2凝胶膜。电导率在60℃左右发生了两个数量级到2.5个数量级的转变，转变前后的X射线衍射谱没有明显的变化。
Low-pressure organometallic chemical vapour deposition (OMCVD) and dip-coating of VO2films using vanadyl tri(isobutoxide) as the starting material were investigated. In OMCVD, discontinuous VO2films, which were composed of fine needle crystals, formed under very limited conditions, around 600° C with a flow rate of oxygen gas of 0.2 to 0.5 cm3sec−1. However, very uniform and tightly packed VO2films were grown by deposition at 300 to 700° C in the absence of oxygen gas and subsequent annealing in nitrogen at 500° C for 2 h. The films exhibited a sharp semiconductor to metal transition at 60 to 70° C, accompanied by a change in the resistivity by four to five orders of magnitude. In dip-coating with two-step heat-treatments (300° C for 1 h in nitrogen and subsequently 500° C for 2 h in nitrogen), of the gel films formed from VO(O-i-Bu)3-H2O-i-PrOH system, uniform (0 1 1) oriented VO2films were formed. A transition in the electrical conductivity by two to two and a half orders of the magnitude was found to occur around 60° C. Before and after the transition, no distinct variation in the XRD pattern was observed.