Ferromagnetism and high Curie temperature in semiconductor heterostructures with Mn δ-doped GaAs and p-type selective doping -: art. no. 241308
Ferromagnetism and high Curie temperature in semiconductor heterostructures with Mn δ-doped GaAs and p-type selective doping -: art. no. 241308
复制标题
DOI：
10.1103/physrevb.67.241308
复制
发表时间：
2003-06-27
影响因子：
3.7
通讯作者：
Tanaka, M
中科院分区：
文献类型：
--
作者：
Nazmul, AM;Sugahara, S;Tanaka, M
在Mn - δ掺杂GaAs/ be - δ掺杂p型AlGaAs异质结构中，磁掺杂剂（Mn）与二维空穴气体（2DHG）相互作用实现了铁磁有序，其中空穴由be -掺杂AlGaAs提供给Mn - δ掺杂GaAs。在合适的生长条件下制备的异质结构的居里温度T-C为172 K，是III-V （InAs, GaAs）磁性半导体中最高的。
The interaction between the magnetic dopants (Mn) and 2-dimensional hole gas (2DHG) in Mn delta-doped GaAs/Be-doped p-type AlGaAs heterostructures, where holes were supplied from the Be-doped AlGaAs to the Mn delta-doped GaAs, realized ferromagnetic ordering. The Curie temperature T-C of the heterostructure prepared with suitable growth conditions was 172 K, highest among the T-C values reported in III-V (InAs, GaAs) magnetic semiconductors.