Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETs
Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETs
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DOI：
10.1109/led.2010.2089425
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发表时间：
2011
影响因子：
4.9
通讯作者：
Yu-Sheng Wu;Hsin-Yuan Hsieh;V. Hu;P. Su
中科院分区：
文献类型：
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作者：
Yu-Sheng Wu;Hsin-Yuan Hsieh;V. Hu;P. Su
这封信使用经过 TCAD 仿真验证的薛定谔方程的解析解，研究了量子限制 (QC) 对超薄体 (UTB) 和薄埋氧化绝缘体上锗 (GeOI) MOSFET 的短沟道效应 (SCE) 的影响。我们的研究表明，尽管当沟道厚度 (Tch) 大于临界值 (Tch,crit) 时，QC 效应会增加阈值电压 (Vth) 滚降，但当 Tch 小于 Tch,crit 时，它可能会降低 GeOI MOSFET 的 Vth 滚降。由于 Ge 和 Si 沟道表现出不同程度的限制和 Tch,crit，因此在对 UTB GeOI 和绝缘体上硅 MOSFET 的 SCE 进行一对一比较时，必须考虑 QC 的影响。
This letter investigates the impact of quantum confinement (QC) on the short-channel effect (SCE) of ultrathin-body (UTB) and thin-buried-oxide germanium-on-insulator (GeOI) MOSFETs using an analytical solution of Schrödinger equation verified with TCAD simulation. Our study indicates that, although the QC effect increases the threshold voltage (Vth) roll-off when the channel thickness (Tch) is larger than a critical value (Tch,crit), it may decrease the Vth roll-off of GeOI MOSFETs when the Tch is smaller than Tch,crit. Since Ge and Si channels exhibit different degrees of confinement and Tch,crit, the impact of QC must be considered when one-to-one comparisons between UTB GeOI and Si-on-insulator MOSFETs regarding the SCE are made.