Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells.
Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells.
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氢处理温度对InGaN/GaN多量子阱性能的影响
DOI：
10.1186/s11671-017-2109-6
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发表时间：
2017-12
影响因子：
--
通讯作者：
Xu B
中科院分区：
文献类型：
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作者：
Zhu Y;Lu T;Zhou X;Zhao G;Dong H;Jia Z;Liu X;Xu B
InGaN/GaN 多量子阱 (MQW) 在不同温度下在阱/势垒上界面处进行氢处理生长。氢处理温度极大地影响MQW的特性。在 850 °C 下进行的氢处理可改善 MQW 的表面和界面质量，并显着增强室温光致发光 (PL) 强度。相反，与未经氢处理的参考样品相比，在 730°C 下进行氢处理的样品没有表现出任何改善。根据温度相关的PL特性分析，得出结论，850°C的氢处理对于减少MQW区域中与缺陷相关的非辐射复合中心更有效，但对载流子局域化影响很小。因此，氢处理温度对于提高InGaN/GaN MQW的质量至关重要。
InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity. In contrast, the sample with hydrogen treatment at 730 °C shows no improvement, as compared with the reference sample without hydrogen treatment. On the basis of temperature-dependent PL characteristics analysis, it is concluded that hydrogen treatment at 850 °C is more effective in reducing defect-related non-radiative recombination centers in MQWs region, yet has little impact on carrier localization. Hence, hydrogen treatment temperature is crucial to improving the quality of InGaN/GaN MQWs.