Planar multibarrier 80/240-GHz heterostructure barrier varactor triplers
Planar multibarrier 80/240-GHz heterostructure barrier varactor triplers
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DOI：
10.1109/22.566631
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发表时间：
1997-04
影响因子：
4.3
通讯作者：
J. R. Jones;W. Bishop;S. Jones;G. Tait
中科院分区：
文献类型：
--
作者：
J. R. Jones;W. Bishop;S. Jones;G. Tait
原型平面四势垒GaAs/Al/sub 0.7/Ga/sub 0.3/As异质结构势垒变容管（HBV）的频率从80到240 GHz的三倍已被制造使用的过程中，在该过程中，器件表面沟道被蚀刻之前形成的接触焊盘到阳极空气桥指。在蚀刻表面沟道之后，通过沟槽平坦化技术促进了器件空气桥指的形成，并且产生具有最小寄生电容的器件。平面四势垒HBV三倍频标称10-/spl μ/m直径的阳极已在交叉波导三倍频块进行了测试，在252 GHz的法兰到法兰的三倍频效率为25%，已产生高达2 mW的功率。这些设备是第一个平面或多屏障HBV三倍报告和他们的输出功率几乎是以前的晶须接触单屏障HBV的两倍。
Prototype planar four barrier GaAs/Al/sub 0.7/Ga/sub 0.3/As heterostructure barrier varactors (HBV's) for frequency tripling from 80 to 240 GHz have been fabricated using a process in which the device surface channel is etched prior to the formation of the contact pad-to-anode air-bridge finger. Formation of the device air-bridge finger after etching the surface channel is facilitated by a trench planarization technique and yields a device with minimal parasitic capacitances. Planar four-barrier HBV triplers with nominal 10-/spl mu/m diameter anodes have been tested in a crossed-waveguide tripler block; as much as 2 mW of power has been generated at 252 GHz with a flange to-flange tripling efficiency of 25%. These devices are the first planar or multibarrier HBV triplers reported and their output powers are nearly double that of previous whisker-contacted single-barrier HBVs.