Facile strategy for low dielectric constant polyimide/silsesquioxane composite films: structural design inspired from nature
Facile strategy for low dielectric constant polyimide/silsesquioxane composite films: structural design inspired from nature
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DOI：
10.1007/s10853-021-05771-y
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发表时间：
2021-01-19
影响因子：
4.5
通讯作者：
Gao, Xin
中科院分区：
文献类型：
--
作者：
Ma, Yingyi;He, Zian;Gao, Xin
在保持材料力学性能的前提下，同时降低介电常数和吸水率，对于高性能介电材料的开发具有重要意义。采用微乳液法，以水滴为模板，在聚酰亚胺（PI）平板膜的两面涂覆具有多级孔结构的多面体低聚倍半硅氧烷（POSS），制备了具有多级孔结构的POSS/PI复合膜。由于引入了两层具有图案化孔的分级多孔结构和POSS，PI膜的介电常数显著降低，同时具有较低的介电损耗。此外，吸水率也大大降低，从而有助于其在高湿度下的优异耐久性。更重要的是，即使引入多孔结构，PI膜的机械性能仍然可以保持，甚至通过优化POSS含量来提高。通过改变POSS含量为10 - 50%，低介电常数为2.28-2.42，介电损耗为0.005-0.009，吸水率为0.56- 0.62%，高湿下介电常数增加1.19- 2.35%，分别降低26- 32%，43- 69%，77-80%和31-37%，与平坦PI膜相比，获得了更好的性能。这些结果表明，我们的复合薄膜的潜在的低介电材料在微电子。
It is important for the development of high-performance dielectric materials to reduce the dielectric constant and water uptake simultaneously, with the maintenance of mechanical properties. Herein, sandwich-type composite film was prepared through coating the both sides of flat polyimide (PI) film with polyhedral oligomeric silsesquioxanes (POSS) contained hierarchical porous structure using the microemulsion method, in which water droplets were used as the template for patterned pores. Due to the introduction of two layers of hierarchical porous structure with patterned pores and POSS, the dielectric constant of PI film was significantly reduced, accompanied by the low dielectric loss. In addition, the water uptake was also greatly reduced, thus contributing to its excellent durability under high humidity. More importantly, even with the introduction of porous structure, the mechanical properties of PI film can still be maintained, or even improved by optimizing POSS content. Through varying the POSS content from 10 to 50%, low dielectric constant of 2.28-2.42, dielectric loss of 0.005-0.009, water uptake of 0.56-0.62%, increment of dielectric constant under high humidity of 1.19-2.35%, with 26-32%, 43-69%, 77-80% and 31-37% of reduction, respectively, compare to flat PI film were achieved. These results indicate the potential of our sandwich-type composite film as low dielectric material in microelectronics.