Fabrication of InGaAs Wires by Preferential Molecular Beam Epitaxy Growth on Corrugated InP Substrate
Fabrication of InGaAs Wires by Preferential Molecular Beam Epitaxy Growth on Corrugated InP Substrate
复制标题
波纹 InP 衬底上择优分子束外延生长 InGaAs 线
DOI：
10.1143/jjap.33.919
复制
发表时间：
1994
影响因子：
1.5
通讯作者：
H. Hasegawa
中科院分区：
文献类型：
--
作者：
H. Fujikura;T. Iwa;H. Hasegawa
首次在波纹状InP衬底上采用择优分子束外延技术成功地制备了InGaAs线结构。在具有带（211）A或（111）A小面的V形槽的衬底上进行生长，并且在非量子区域中制造线。阐明了生长条件对样品截面结构和光致发光（PL）性能的影响。在（111）A晶面上生长的纳米线比在（211）A晶面上生长的纳米线具有更好的结构和光致发光性能。插入InGaAs低温（LT）缓冲层被发现大大提高了带边PL强度。在最佳条件下，该线表现出强烈的PL发射与窄峰宽度的能量位置的InGaAs晶格匹配的InP。一个缺陷相关的排放也观察到和讨论。
Fabrication technology of InGaAs wire structures by preferential molecular beam epitaxy growth on corrugated InP substrate was successfully developed for the first time. Growth was made on the substrates having V-grooves with (211)A or (111)A facets and wires were made in nonquantum regime. The effects of the growth conditions on the cross-sectional structure and photoluminescence (PL) properties were clarified. Wires grown on (111)A facets showed better structural and PL properties than those on (211)A facets. Insertion of an InGaAs low-temperature (LT) buffer layer was found to greatly improve the band-edge PL intensity. Under optimum conditions, the wire exhibited an intense PL emission with a narrow peak width at an energy position of InGaAs lattice-matched to InP. A defect-related emission is also observed and discussed.