Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings
Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings
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DOI：
10.7567/apex.11.112701
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发表时间：
2018-10
影响因子：
2.3
通讯作者：
T. Slight;S. Stanczyk;S. Watson;A. Yadav;S. Grzanka;E. Rafailov;P. Perlin;S. Najda;M. Leszczynski;S. Gwyn;A. Kelly
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文献类型：
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作者：
T. Slight;S. Stanczyk;S. Watson;A. Yadav;S. Grzanka;E. Rafailov;P. Perlin;S. Najda;M. Leszczynski;S. Gwyn;A. Kelly
本文报道了一种具有高阶陷波光栅的分布反馈半导体激光器（DFB-LD）的室温连续工作特性。介绍了基于（Al，In）GaN材料体系的DFB器件的设计、制备和表征。未涂覆的器件在408.6 nm处表现出单波长发射，在225 mA下光功率为20 mW。实现了35 dB的边模抑制比（SMSR），分辨率限制的半峰全宽为6.5 pm。
We report on the continuous-wave, room-temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and characterization of DFB devices, which are based on the (Al,In)GaN material system, is described. The uncoated devices exhibited single-wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side-mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution-limited full-width at half maximum of 6.5 pm.