Strong Converse Magnetoelectric Effect in a Composite of Weakly Ferromagnetic Iron Borate and Ferroelectric Lead Zirconate Titanate
Strong Converse Magnetoelectric Effect in a Composite of Weakly Ferromagnetic Iron Borate and Ferroelectric Lead Zirconate Titanate
复制标题
DOI：
10.1103/physrevapplied.14.034039
复制
发表时间：
2020-09-15
影响因子：
4.6
通讯作者：
Srinivasan, G.
中科院分区：
文献类型：
--
作者：
Popov, M.;Liu, Y.;Srinivasan, G.
本文对单晶硼酸铁、弱铁磁矩倾斜反铁磁体和铁电锆钛酸铅（PZT）复合材料中机械-应变介导的逆磁电（CME）效应的性质进行了模型和实验研究。电场E在压电陶瓷中产生的压电应变表现为硼酸铁中准铁磁共振（FMR）场由于强磁弹性相互作用而发生位移。在5.5-6.5 GHz频段，由FMR与E的场移数据确定的CME相互作用强度为46-54 MHz cm/kV。CME的强度与报道的铁磁性氧化物和PZT复合材料的强度相当。针对复合材料中的cme，提出了考虑压电变形对硼酸铁中磁序参数和磁共振影响的模型，计算得到的耦合系数与实际数据吻合较好。估计高频AFMR模式在300 GHz左右的E可调性约为1.7 MHz kV/cm，相对于准fmr模式来说是非常小的。硼酸铁和铁电体的复合材料在双电场和磁场可调谐信号处理器件中具有很强的CME相互作用，并且与传统的铁磁氧化物器件相比，需要相当小的偏置磁场，因此非常有吸引力。
This report is on a model and experiment on the nature of mechanical-strain-mediated converse magnetoelectric (CME) effect in a composite of single-crystal iron borate, a canted antiferromagnet with a weak ferromagnetic moment, and ferroelectric lead zirconate titanate (PZT). The piezoelectric strain generated in PZT by an electric field E manifested as a shift in the quasiferromagnetic resonance (FMR) field in iron borate due to strong magnetoelastic interactions. The CME interaction strength determined from data on field shift in FMR versus E is 46-54 MHz cm/kV at 5.5-6.5 GHz. The strength of the CME is comparable to values reported for composites of ferrimagnetic oxides and PZT. A model that considers the effect of piezoelectric deformation on magnetic order parameters and magnetic resonance in iron borate is proposed for the CMEs in the composite and estimated ME coupling coefficients are in good agreement with data. The E tunability of the high-frequency AFMR mode at about 300 GHz is estimated to be on the order of 1.7 MHz kV/cm and is very small relative to the quasi-FMR mode. Composites of iron borate and ferroelectrics are very attractive for use in dual electric field and magnetic field tunable signal processing devices due to strong CME interactions and the need for a rather small bias magnetic field compared with traditional ferrimagnetic oxide based devices.