An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices
An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices
复制标题
DOI：
10.1002/pssa.201900801
复制
发表时间：
2020-01
期刊：
影响因子：
--
通讯作者：
Rich Floyd;K. Hussain;A. Mamun;M. Gaevski;G. Simin;M. Chandrashekhar;Asif Khan
中科院分区：
文献类型：
--
作者：
Rich Floyd;K. Hussain;A. Mamun;M. Gaevski;G. Simin;M. Chandrashekhar;Asif Khan
本文使用基于单片集成 AlxGa1−xN 多量子阱 (MQW) 的发光二极管和探测器对 n-AlxGa1−xN 平面波导在 λ 发射 ≈ 280 nm 时的损耗进行了初步研究。集成器件的外延层结构生长在蓝宝石衬底上的 AlN（3.5 μm 厚）模板上。通过实验建立了发射器-探测器光学耦合和外延结构内辐射的方向独立性。开发了用于估计这些条件下的衰减系数的模型。平面 n-Al0.65Ga0.35N 波导的衰减系数经测量为 5-6 cm−1，它主要来自自由载流子吸收，而不是与表面粗糙度相关的瑞利散射。
An initial study of losses in n‐AlxGa1−xN planar waveguides at λemission ≈ 280 nm using monolithically integrated AlxGa1−xN multiple quantum wells (MQWs)‐based light‐emitting diodes and detectors is presented. The epilayer structure for the integrated devices is grown on an AlN (3.5 μm thick) template over sapphire substrates. Emitter–detector optical coupling and the directional independence of radiation within the epistructure are experimentally established. A model for estimating the attenuation coefficient under these conditions is developed. The attenuation coefficient for a planar n‐Al0.65Ga0.35N waveguide is measured to be 5–6 cm−1, and it primarily arises from the free‐carrier absorption rather than surface roughness‐dependent Rayleigh scattering.