Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications
Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications
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DOI：
10.1109/led.2004.824840
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发表时间：
2004-04-01
影响因子：
4.9
通讯作者：
Seppä, H
中科院分区：
文献类型：
--
作者：
Kaajakari, V;Mattila, T;Seppä, H
一种微机械13.1兆赫体声模式硅。谐振器具有高品质因数(Q=130000)和高最大驱动电平(在磁滞极限时P=0.12 mW)。利用反应离子刻蚀技术制作了单晶硅谐振器样机。基于新型振荡器的演示振荡器在距载波1 kHz处的单边带相位噪声为-138dBc/Hz。
A micromechanical 13.1-MHz bulk acoustic mode silicon. resonator having a high quality factor (Q = 130000) and high maximum drive level (P = 0.12 mW at the hysteresis limit) is demonstrated. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching of A silicon-on-insulatior wafer. A demonstration oscillator based on the new resonator shows single-sideband phase noise of - 138 dBc/Hz at 1 kHz offset from the carrier.