Application of negative differential conductance in Al/AlOx single-electron transistors for background charge characterization
Application of negative differential conductance in Al/AlOx single-electron transistors for background charge characterization
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负微分电导在 Al/AlOx 单电子晶体管中用于背景电荷表征的应用
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
G. Snider
中科院分区：
文献类型：
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作者：
H. George;M. Pierre;X. Jehl;A. Orlov;M. Sanquer;G. Snider
本文报道了石英衬底上正常金属-金属氧化物单电子晶体管（SET）的负差分电导（NDC）充电图。我们讨论了观察到的效果的物理起源和原因。我们用一个简单的静电模型模拟了SET的电荷图，发现实验和理论之间有很好的相关性。我们还发现，在将样品加热到室温后，与陷阱充电相关的充电模式保持不变（尽管在Vg坐标中的位置发生了变化），并建议使用这些不同的特征（如NDC）作为标记来表征set中的背景电荷。
Negative differential conductance (NDC) is reported in the charging diagram of a normal state metal-metal oxide single electron transistor (SET) fabricated on a quartz substrate. We discuss the physical origin and cause of the observed effect. Using a simple electrostatic model we simulated SET charging diagrams and found excellent correlation between experiment and theory. We also found that the charging pattern associated with trap charging remains the same after warming the sample to room temperature (though position in Vg coordinates changes) and suggest to use these distinct features (such as NDC) as markers to characterize background charge in SETs.