Dynamic Control Over Electronic Transport in 3D Bulk Nanographene via Interfacial Charging
Dynamic Control Over Electronic Transport in 3D Bulk Nanographene via Interfacial Charging
复制标题
通过界面充电动态控制 3D 块状纳米石墨烯中的电子传输
DOI：
10.1002/adfm.201303534
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发表时间：
2014
影响因子：
19
通讯作者：
J. Biener
中科院分区：
文献类型：
--
作者：
S. Dasgupta;D. Wang;C. Kübel;H. Hahn;T. F. Baumann;J. Biener
界面主导型块体材料中电化学表面电荷引起的物理性质变化是材料科学中一个迅速发展的领域。最近发展起来的具有超高比表面积和化学惰性的3D-BNG大分子组装为这一领域提供了新的机遇。在这里，可以通过电化学诱导的表面电荷密度来动态地控制厘米尺寸的3D-BNG整体中的电子输运。具体地说，在施加≤1V栅势的情况下，观察到宏观电导的完全可逆变化，最高可达几百%。观察到的电导变化可以用电化学诱导的载流子积累或耗尽以及载流子迁移率的较大变化来解释，后者受界面电荷注入引起的缺陷密度调制的影响很大，随着缺陷浓度的增加而急剧下降。这项研究中提出的现象被认为为块状石墨烯材料的新应用打开了大门，例如，低电压和高功率可调电阻。
Electrochemical surface charge‐induced variation of physical properties in interface‐dominated bulk materials is a rapidly emerging field in material science. The recently developed three‐dimensional bulk nanographene (3D‐BNG) macro‐assemblies with ultra‐high surface area and chemical inertness offer new opportunities in this area. Here, the electronic transport in centimeter‐sized 3D‐BNG monoliths can be dynamically controlled via electrochemically induced surface charge density. Specifically, a fully reversible variation in macroscopic conductance up to several hundred percent is observed with ≤1 V applied gate potential. The observed conductivity change can be explained in the light of the electrochemically‐induced accumulation or depletion of charge carriers in combination with a large variation in the carrier mobility; the latter, being highly affected by the defect density modulations resulting from the interfacial charge injection, sharply decreases with an increase in defect concentrations. The phenomenon presented in this study is believed to open the door to novel applications of bulk graphene materials such as, for example, low voltage and high power tunable resistors.
影响因子：
29.4
作者：
L. Shao;M. Ruther;S. Linden;S. Essig;K. Busch;J. Weissmüller;M. Wegener
通讯作者：
L. Shao;M. Ruther;S. Linden;S. Essig;K. Busch;J. Weissmüller;M. Wegener