Lattice relaxation of ZnS on GaP investigated by high-resolution X-ray diffraction and transmission electron microscopy
Lattice relaxation of ZnS on GaP investigated by high-resolution X-ray diffraction and transmission electron microscopy
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通过高分辨率 X 射线衍射和透射电子显微镜研究 GaP 上 ZnS 的晶格弛豫
DOI：
10.1002/pssc.201100596
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Akiyoshi Yamauchi
中科院分区：
文献类型：
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作者：
Kunio Ichino;Akinori Nishigaki;Akiyoshi Yamauchi
用高分辨X射线衍射仪和透射电子显微镜研究了生长在(001)GaP衬底上的硫化锌的晶格驰豫过程。224个X射线衍射峰的倒易空间图(RSM)清楚地表明，随着厚度的增加，由共格生长向弛豫生长转变。对于32 nm厚的ZnS层，RSM显示出与GaP衬底的几乎共格生长，但它也显示出晶格弛豫的开始。用透射电子显微镜观察到32 nm厚的ZnS层的横截面晶格像显示了可能由晶格松弛引起的缺陷，而21 nm厚的层则没有发现这种缺陷。因此，GaP上硫化锌的临界厚度似乎在21 nm到32 nm之间。(2012Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
The lattice‐relaxation process of ZnS grown on (001) GaP substrates has been investigated in detail by using high‐resolution X‐ray diffraction (HRXRD) and transmission electron microscopy (TEM). Reciprocal space maps (RSMs) of 224 XRD peaks for ZnS and GaP clearly show transition from coherent growth to relaxed growth with increasing the thickness. For a 32nm‐thick ZnS layer the RSM indicates almost coherent growth to GaP substrate; it also shows, however, a sign of the initiation of lattice relaxation. The cross‐sectional lattice image of the 32 nm thick ZnS layer observed by TEM exhibits defects probably resulting from lattice relaxation, while no such defects are seen for the 21 nm thick layer. Therefore, the critical thickness of ZnS on GaP seems to be between 21 nm and 32nm. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)