Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors
Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors
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DOI：
10.1063/1.2431465
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发表时间：
2007-01-08
影响因子：
4
通讯作者：
Rotkin, Slava V.
中科院分区：
文献类型：
--
作者：
Cao, Qing;Xia, Minggang;Rotkin, Slava V.
用解析模型分析了薄膜晶体管(TFT)中单壁碳纳米管(SWCNT)网络/阵列与平板栅电极之间的静电耦合，并用解析模型和有限元模型分析了经典极限下的静电耦合。计算的电容取决于栅电介质的厚度和管之间的平均间距，还在一定程度上取决于这些间距的分布。对使用亚单层随机单壁碳纳米管网络的晶体管的实验验证了这些计算的某些方面。这一结果对于发展纳米管网络或阵列作为TFT和其他电子器件中的有源层具有重要意义。(C)2007年美国物理研究所。
The electrostatic coupling between singled-walled carbon nanotube (SWCNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs ) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some dependence on the distribution of these spacings. Experiments on transistors that use submonolayer, random networks of SWCNTs verify certain aspects of these calculations. The results are important for the development of networks or arrays of nanotubes as active layers in TFTs and other electronic devices. (c) 2007 American Institute of Physics.