Retention characteristics in Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method
Retention characteristics in Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method
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DOI：
10.1063/1.1886893
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发表时间：
2005-03
影响因子：
4
通讯作者：
A. Simões;M. A. Ramirez;N. A. Perruci;C. Riccardi;E. Longo;J. Varela
中科院分区：
文献类型：
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作者：
A. Simões;M. A. Ramirez;N. A. Perruci;C. Riccardi;E. Longo;J. Varela
采用聚合物前驱体法在Pt scinTi scinSiO2 scinSi衬底上制备了Bi 3.25La 0.75Ti 3O 12（BLT）铁电薄膜。在700°C退火2h后，薄膜呈现c轴择优取向。所有的电容器都表现出良好的极化疲劳特性，至少达到1×1010双极脉冲周期和良好的保持性能高达1×104s。我们发现，在等待时间为10 000 S时，5个写入闪烁读取电压的极化损失是微不足道的。独立于所施加的电场，保留的可切换的偏振接近一个近稳态值后的保留时间为10秒。
Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were deposited on Pt∕Ti∕SiO2∕Si substrates by the polymeric precursor method. The films present c-axis preferred orientation after annealing at 700°C for 2h in conventional furnace. All the capacitors showed good polarization fatigue characteristics at least up to 1×1010 bipolar pulse cycles and excellent retention properties up to 1×104s. We found that the polarization loss is insignificant with five write∕read voltages at a waiting time of 10 000 S. Independently of the applied electric field the retained switchable polarization approached a nearly steady-state value after a retention time of 10s.