Oriented film growth of Ba1-xSrxTiO3 dielectrics on glass substrates using 2D nanosheet seed layer
Oriented film growth of Ba1-xSrxTiO3 dielectrics on glass substrates using 2D nanosheet seed layer
复制标题
使用 2D 纳米片种子层在玻璃基板上定向生长 Ba1-xSrxTiO3 电介质
DOI：
10.1021/am400849z
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发表时间：
2013
影响因子：
9.5
通讯作者：
T. Sasaki
中科院分区：
文献类型：
--
作者：
C. Jung;T. Ohnishi;M. Osada;K. Takada;T. Sasaki
采用脉冲激光沉积法在玻璃衬底上制备了具有择优取向的Ba0.5Sr0.5TiO3（BST）薄膜。为了确保晶体的择优取向，我们利用分子薄的Ca2Nb3O10钙钛矿纳米片作为种子层，并成功地制备了具有近乎完美的（100）轴取向的BST薄膜。在空气中450 °C退火后的100 nm薄膜显示出良好的介电性能（εr> 400），其与具有相同厚度的外延生长的薄膜的ε r值相当。这些结果表明，纳米片晶种层在受控膜生长中起着至关重要的作用，实现了BST的近本征性能。
An approach to fabricate Ba0.5Sr0.5TiO3(BST) films with a preferred orientation on a glass substrate by pulsed laser deposition was developed. To ensure a preferred crystallographic orientation, we utilized a molecularly thin Ca2Nb3O10perovskite nanosheet as a seed layer and successfully fabricated BST films with a nearly perfect (100)-axis orientation. The 100 nm films after annealing at 450 °C in air showed a good dielectric performance (εr> 400), which was comparable to the εrvalue of epitaxially grown films with the same thickness. These results indicate that the nanosheet seed layer plays a crucial role in controlled film growth, realizing a nearly intrinsic performance of BST.