Growth of SrTiO3 on Si(001) by hybrid molecular beam epitaxy
Growth of SrTiO3 on Si(001) by hybrid molecular beam epitaxy
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混合分子束外延在 Si(001) 上生长 SrTiO3
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
R. Engel
中科院分区：
文献类型：
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作者：
Lei Zhang;R. Engel
我们报道了通过混合分子束外延 (hMBE) 在 Si(001) 上异质外延生长 SrTiO3 薄膜。在这里，元素锶和金属有机前体四异丙醇钛（TTIP）在没有额外氧气的情况下共同提供。在加载样品之前，通过将新鲜的 Sr 蒸发到 hMBE 反应器中，可以避免在天然氧化物去除过程中原始 Si 表面的碳化。对使用不同的 Sr 到 TTIP 助熔剂生长的一系列 46 nm 厚的 SrTiO3 薄膜的成核、生长和结晶行为以及结构性能和薄膜表面进行了表征，以研究非化学计量生长条件对薄膜晶格参数和表面形态的影响。具有外延关系的高质量 SrTiO3 薄膜 (001)SrTiO3 || (001)Si 和 [110]SrTiO3 || [100]Si 被证明在 SrTiO3/Si 界面处形成了约 4 nm 厚的非晶层。使用具有可扩展生长速率的薄膜技术成功生长具有原子级光滑表面的高质量 SrTiO3 薄膜，为硅上功能氧化物的异质集成提供了一条有前途的途径。 （© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA，魏因海姆）
We report the heteroepitaxial growth of SrTiO3 thin films on Si(001) by hybrid molecular beam epitaxy (hMBE). Here, elemental strontium and the metal‐organic precursor titanium tetraisopropoxide (TTIP) were co‐supplied in the absence of additional oxygen. The carbonization of pristine Si surfaces during native oxide removal was avoided by freshly evaporating Sr into the hMBE reactor prior to loading samples. Nucleation, growth and crystallization behavior as well a structural properties and film surfaces were characterized for a series of 46‐nm‐thick SrTiO3 films grown with varying Sr to TTIP fluxes to study the effect of non‐stoichiometric growth conditions on film lattice parameter and surface morphology. High quality SrTiO3 thin films with epitaxial relationship (001)SrTiO3 || (001)Si and [110]SrTiO3 || [100]Si were demonstrated with an amorphous layer of around 4 nm thickness formed at the SrTiO3/Si interface. The successful growth of high quality SrTiO3 thin films with atomically smooth surfaces using a thin film technique with scalable growth rates provides a promising route towards heterogeneous integration of functional oxides on Si. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)