Ion irradiation of III–V semiconductor surfaces: From self-assembled nanostructures to plasmonic crystals
Ion irradiation of III–V semiconductor surfaces: From self-assembled nanostructures to plasmonic crystals
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DOI：
10.1063/1.5079908
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发表时间：
2019-10
影响因子：
15
通讯作者：
M. Kang;R. Goldman
中科院分区：
文献类型：
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作者：
M. Kang;R. Goldman
半导体表面的离子辐照是产生各种自组织纳米结构的一种很有前途的方法。此外，聚焦离子辐照和分子束外延的结合为杂化材料的表面和界面在制造过程中提供了前所未有的原子水平的设计和控制。在这篇综述中，我们描述了从岛到纳米棒到三维纳米颗粒(NP)阵列的定向自组装。首先，我们讨论了III-V表面的聚焦离子辐照，这导致了V族物种的择优溅射，随后形成了富III族的金属纳米结构。对于超过阈值剂量的连续照射，纳米粒子(NP)的演化由溅射产额和局部离子束入射角决定，导致纳米粒子、纳米棒或纳米粒子链的阵列。除了描述利用聚焦离子束制备的NP阵列的过度生长形成紧密堆积的嵌入型Ga：GaAs纳米复合材料外，我们还讨论了NP阵列的表面等离子体共振以及表面和埋入的NP阵列对GaAs光致发光效率的影响。最后，我们讨论了“等离子体晶体”在等离子体增强光电子学方面的潜力。
Ion-irradiation of semiconductor surfaces has emerged as a promising approach to generate a variety of self-organized nanostructures. Furthermore, the combination of focused-ion-irradiation with molecular-beam epitaxy provides unprecedented design and control of surfaces and interfaces of hybrid materials at the atomic level during fabrication. In this review, we describe the directed self-assembly of nanostructure arrays ranging from islands to nanorods to 3-dimensional nanoparticle (NP) arrays. First, we discuss focused-ion-irradiation of III–V surfaces, which leads to preferential sputtering of group V species, followed by the formation of group III-rich metallic nanostructures. For continued irradiation beyond a threshold dose, the nanoparticle (NP) evolution is determined by the sputtering yield and the local ion beam angle of incidence, resulting in arrays of nanoparticles, nanorods, or nanoparticle chains. In addition to describing the formation of close-packed embedded Ga:GaAs nanocomposites using overgrowth of focused-ion-beam fabricated NP arrays, we discuss the surface plasmon resonances of NP arrays as well as the influence of both surface and buried NP arrays on the GaAs photoluminescence efficiency. Finally, we discuss the potential of “plasmonic crystals” for plasmon-enhanced optoelectronics.