Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
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DOI：
10.1109/led.2002.1015207
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发表时间：
2002-07-01
影响因子：
4.9
通讯作者：
Han, JP
中科院分区：
文献类型：
--
作者：
Ma, TP;Han, JP
原则上，基于金属-铁电-半导体栅极堆叠的存储器场效应晶体管（FET）可以是提供随机存取、高速、低功率、高密度和非易失性的理想存储器技术的构建块。然而，在实践中，迄今为止，所报道的铁电存储器晶体管中没有一个实现超过几天的存储器保持时间，这与非易失性存储器设备的十年保持要求相差甚远。这项工作将检查短保留的两个主要原因（假设在铁电膜中没有显著的移动的离子电荷运动）：1）去极化场和2）有限的栅极漏电流。一个可能的解决方案的存储器保留问题将被建议，其中涉及单晶，单畴铁电体的生长在Si上。还将提出使用铁电存储器晶体管作为无电容器DRAM单元。
In principle, a memory field-effect transistor (FET) based on the metal-ferroelectric-semiconductor gate stack could be the building block of an ideal memory technology that offers random access, high speed, low power, high density and nonvolatility, In practice, however, so far none of the reported ferroelectric memory transistors has achieved a memory retention time of more than a few days, a far cry from the ten-year retention requirement for a nonvolatile memory device. This work will examine two major causes of the short retention (assuming no significant mobile ionic charge motion in the ferroelectric film): 1) depolarization field and 2) finite gate leakage current. A possible solution to the memory retention problem will be suggested, which involves the growth of single-crystal, single domain ferroelectric on Si. The use of the ferroelectric memory transistor as a capacitor-less DRAM cell will also be proposed.