Bistability in Atomic-Scale Antiferromagnets
Bistability in Atomic-Scale Antiferromagnets
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DOI：
10.1126/science.1214131
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发表时间：
2012-01-13
期刊：
影响因子：
56.9
通讯作者：
Heinrich, Andreas J.
中科院分区：
文献类型：
--
作者：
Loth, Sebastian;Baumann, Susanne;Heinrich, Andreas J.
随着数据存储设备的小型化，在原子尺度上控制磁性变得至关重要。我们发现，反铁磁纳米结构，在一个表面上的几个铁原子组成，表现出两个磁性状态，尼尔状态，这是稳定的在低温下几个小时。对于最小的结构，我们观察到由于量子隧穿的磁化尼尔状态之间的转换。我们使用自旋极化隧穿感测所设计结构的磁性状态，并以纳秒的速度在它们之间进行电切换。调整相邻反铁磁纳米结构的性质使得能够在低温下演示密集的非易失性信息存储。
Control of magnetism on the atomic scale is becoming essential as data storage devices are miniaturized. We show that antiferromagnetic nanostructures, composed of just a few Fe atoms on a surface, exhibit two magnetic states, the Neel states, that are stable for hours at low temperature. For the smallest structures, we observed transitions between Neel states due to quantum tunneling of magnetization. We sensed the magnetic states of the designed structures using spin-polarized tunneling and switched between them electrically with nanosecond speed. Tailoring the properties of neighboring antiferromagnetic nanostructures enables a low-temperature demonstration of dense nonvolatile storage of information.