Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping.
Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping.
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DOI：
10.1021/acs.nanolett.5b03531
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发表时间：
2015-11-11
期刊：
影响因子：
10.8
通讯作者：
Oliver RA
中科院分区：
文献类型：
--
作者：
Griffiths JT;Zhang S;Rouet-Leduc B;Fu WY;Bao A;Zhu D;Wallis DJ;Howkins A;Boyd I;Stowe D;Kappers MJ;Humphreys CJ;Oliver RA
纳米阴极发光揭示了高效发光二极管中单个 InGaN 量子阱的光谱特性。我们观察到每个量子阱的发射波长的变化，与量子势垒中的硅掺杂剂浓度相关。这通过能带剖面模拟再现，揭示了硅掺杂减少了量子阱中的斯塔克位移。我们证明纳米阴极发光是一种优化光电器件掺杂的强大技术。
Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.