On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
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DOI：
10.1109/ted.2021.3081527
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发表时间：
2021-07-01
影响因子：
3.1
通讯作者：
Knoch, Joachim
中科院分区：
文献类型：
--
作者：
Sun, Bin;Richstein, Benjamin;Knoch, Joachim
研究了双栅可重构场效应晶体管（RFET）的工作模式。为此，双栅极硅纳米线FET的制造基于硅的各向异性湿法蚀刻和镍硅化，从而在源极和漏极处产生硅化物纳米线肖特基结。我们比较了源极编程门（PGAS）与更常见的漏极编程门（PGAD）操作模式。而在PGAD模式下，双极操作被抑制，开关由于通过肖特基势垒的注入而恶化。在PGAS模式下操作RFET产生接近于常规MOSFET的开关行为。然而，这需要权衡强非线性输出特性的小偏置电压。我们的测量结果支持采用非平衡绿色函数方法的运输模拟。
We investigate the operation modes of a dual-gate reconfigurable field-effect transistor (RFET). To this end, dual-gate silicon-nanowire FETs are fabricated based on anisotropic wet etching of silicon and nickel silicidation yielding silicide-nanowire Schottky junctions at source and drain. We compare the program gate at source (PGAS) with the more usual program gate at drain (PGAD) operation mode. While in PGAD mode, ambipolar operation is suppressed, switching is deteriorated due to the injection through a Schottky barrier. Operating the RFET in PGAS mode yields a switching behavior close to a conventional MOSFET. This, however, needs to be traded off against strongly nonlinear output characteristics for small bias voltages. Our measurement results are supported by transport simulations employing a nonequilibrium Green's function approach.