Electron transport in degenerate Mn-doped ZnO nanowires
Electron transport in degenerate Mn-doped ZnO nanowires
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DOI：
10.1063/1.2431788
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发表时间：
2007-01
影响因子：
4
通讯作者：
J. Salfi;U. Philipose;S. Aouba;S. Nair;H. Ruda
中科院分区：
文献类型：
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作者：
J. Salfi;U. Philipose;S. Aouba;S. Nair;H. Ruda
作者对单个单晶Mn掺杂ZnO纳米线进行了变温电测量。他们利用电子束光刻技术制造的背栅场效应晶体管结构，证实了纳米线具有n型导电性。在225 K温度下，场效应迁移率和自由电子浓度分别为1.35 × 1017 cm-3和1.35 × 1017 cm-2 V-1 s-1。载流子浓度随温度的变化很小，直到12 K，这表明材料是简并的。迁移率随温度降低而降低到12 K，与简并半导体中的电离杂质散射一致。
The authors have performed variable-temperature electrical measurements on individual single-crystalline, Mn-doped ZnO nanowires. Using a back-gated field-effect transistor structure fabricated with electron-beam lithography, they have established that nanowires exhibit n-type conduction. At a temperature of 225K, the field-effect mobility and free electron concentration are ≈35cm2V−1s−1 and ≈3.6×1017cm−3, respectively. Carrier concentration varies weakly with temperature down to 12K, signifying that the material is degenerate. Mobility decreases with decreasing temperature down to 12K, in a manner consistent with ionized impurity scattering in a degenerate semiconductor.