Spatial Quantification of Microstructural Degradation during Fast Charge in 18650 Lithium-Ion Batteries through Operando X-ray Microtomography and Euclidean Distance Mapping
Spatial Quantification of Microstructural Degradation during Fast Charge in 18650 Lithium-Ion Batteries through Operando X-ray Microtomography and Euclidean Distance Mapping
复制标题
通过操作 X 射线显微断层扫描和欧几里德距离测绘对 18650 锂离子电池快速充电期间微观结构退化进行空间量化
DOI:
10.1021/acsaem.2c02397
复制
发表时间:
2022
影响因子:
6.4
通讯作者:
Nelson Weker, Johanna
中科院分区:
文献类型:
--
作者:
Allen, Eva;Lim, Linda Y.;Xiao, Xianghui;Liu, Albert;Toney, Michael F.;Cabana, Jordi;Nelson Weker, Johanna
Fast charging at rates above 1C aggressively accelerates structural degradation induced by increases in local temperature and inhomogeneous transport of charge. At the micron scale, the first indication of damage is irreversible expansion of the electrode layers. Electrode damage often involves void formation between the active material and conductive binder matrix. Quantification of this evolution must be carried out in real time and, thus, nondestructively. We report operando X-ray microtomography of cylindrical cells under fast-charge cycling. Two 18650 batteries were measured during cycling after antecedent fast charging cycles to track morphological damage at different points of battery life. A method of deep learning segmentation was used to objectively quantify the electrode degradation. Using Euclidean distance mapping, electrode dilation and voids were spatially resolved. Highly reversible trends in dilation were quantified during charge/discharge in the anode layers with irreversible increases in electrode voids. Anode voids showed clear localization within the first 10 μm near the current collectors, indicating delamination that spread upon further cycling. The cathode dilation trended opposite to the anode with higher fluctuations and an overall decrease in cathode voids. Insight into how fast charging induces structural damage better informs research into fast-charge protocols and battery chemistries.