Multi-Wavelength-Recognizable Memristive Devices via Surface Plasmon Resonance Effect for Color Visual System.

Multi-Wavelength-Recognizable Memristive Devices via Surface Plasmon Resonance Effect for Color Visual System.
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DOI:
10.1002/smll.202207928
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发表时间:
2023-03
期刊:
影响因子:
13.3
通讯作者:
Jiaqi Han;Xuanyu Shan;Ya Lin;Ye Tao;Xiaoning Zhao;Zhongqiang Wang;Haiyang Xu;Yichun Liu
Jiaqi Han;Xuanyu Shan;Ya Lin;Ye Tao;Xiaoning Zhao;Zhongqiang Wang;Haiyang Xu;Yichun Liu
中科院分区:
材料科学1区
文献类型:
--
作者:
Jiaqi Han;Xuanyu Shan;Ya Lin;Ye Tao;Xiaoning Zhao;Zhongqiang Wang;Haiyang Xu;Yichun Liu

文献摘要

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光电忆阻器在光通信芯片和人工视觉系统中具有广阔的应用前景,引起了人们的广泛关注。然而,基于忆阻器件的人工视觉系统的实现仍然是一个相当大的挑战,因为大多数光电忆阻器不能识别颜色。本文提出了基于银(Ag)纳米颗粒(NPs)和多孔氧化硅(SiOx)纳米复合材料的多波长可识别忆阻器件。依靠局域表面等离子体共振(LSPR)和SiOx中Ag纳米颗粒的光激发效应,可以逐渐降低器件的置位电压。此外,电流过冲问题得到缓解,以抑制在不同波长的可见光照射后导电细丝的过度生长,导致不同的低电阻状态(LRS)。利用控制开关电压和LRS电阻分布的特性,实现了彩色图像的识别。X射线光电子能谱(XPS)和导电原子力显微镜(C-AFM)研究表明,光辐照对阻变(RS)过程有重要影响:光辅助Ag离子化导致设置电压和过冲电流显著降低。该工作为未来人工彩色视觉系统中多波长可识别忆阻器件的研制提供了一种有效的方法。
Photoelectric memristor has attracted many attentions thanks to their promising potential in optical communication chips and artificial vision systems. However, the implementation of an artificial visual system based on memristive devices remains a considerable challenge because most photoelectric memristors cannot recognize color. Herein, multi-wavelength recognizable memristive devices based on silver(Ag) nanoparticles (NPs) and porous silicon oxide (SiOx ) nanocomposites are presented. Rely on the effects of localized surface plasmon resonance (LSPR) and optical excitation of Ag NPs in SiOx , the set voltage of the device can be gradually reduced. Moreover, the current overshoot problem is alleviated to suppress conducting filament overgrowth after visible light irradiation with different wavelengths, resulting in diverse low resistance states (LRS). Taking advantage of the characteristics of controlled switching voltage and LRS resistance distribution, color image recognition is finally realized in the present work. X-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (C-AFM) show that the light irradiation plays an important role on resistive switching (RS) process: the photo-assisted Ag ionization leads to a significant reduction of set voltage and overshoot current. This work provides an effective method toward the development of multi-wavelength-recognizable memristive devices for future artificial color vision system.