Structural changes due to reannealing of Ge thin films prepared by solid phase epitaxial growth on Si (111) surface
Structural changes due to reannealing of Ge thin films prepared by solid phase epitaxial growth on Si (111) surface
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DOI：
10.1016/j.tsf.2020.138007
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发表时间：
2020-09-01
期刊：
影响因子：
2.1
通讯作者：
Shigeta, Yukichi
中科院分区：
文献类型：
--
作者：
Ishii, Chiaki;Shigeta, Yukichi
研究了退火温度和再退火温度对Si（111）衬底上固相外延生长3层Ge薄膜的影响。Ge和Si的混合在高达400 ℃时受到抑制，但在425 ℃时清楚地观察到。在400 ℃退火过程中形成的厚度为2双层的润湿层由于衬底上Si（111）7 × 7结构中的堆垛层错而具有许多缺陷。通过在600摄氏度下再退火，可以在抑制混杂的同时去除缺陷。从Ge膜在600 ℃以下再退火后的形貌和结构变化讨论了再结晶机制。
We investigate effects of annealing and reannealing temperatures on the Ge film with thickness of 3 bilayer prepared by the solid phase epitaxial growth on Si(111) substrate. Intermixing of Ge and Si is suppressed up to 400 degrees C, but is clearly observed at 425 degrees C. The wetting layer with thickness of 2 bilayer formed during the annealing at 400 degrees C has many defects due to stacking faults in the Si(111) 7 x 7 structure on the substrate. By reannealing at 600 degrees C, the defects can be removed while suppressing intermixing. The recrystallization mechanism is discussed from the morphological and structural changes of the Ge film by reannealing at temperatures up to 600 degrees C.