Electron-Precise/Deficient La5-xCaxGe4 (3.4 ≤ x ≤ 3.8) and Ce5-xCaxGe4 (3.0 ≤ x ≤ 3.3): Probing Low-Valence Electron Concentrations in Metal-Rich Gd5Si4-type Germanides
Electron-Precise/Deficient La5-xCaxGe4 (3.4 ≤ x ≤ 3.8) and Ce5-xCaxGe4 (3.0 ≤ x ≤ 3.3): Probing Low-Valence Electron Concentrations in Metal-Rich Gd5Si4-type Germanides
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DOI：
10.1021/ja055568s
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发表时间：
2005-10
影响因子：
15
通讯作者：
L. Wu;Sang-Hwan Kim;D. Seo
中科院分区：
文献类型：
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作者：
L. Wu;Sang-Hwan Kim;D. Seo
本文首次报道了在富金属的R_5T_t_4Zintl系统（R =稀土金属; T_t_1 = Si，Ge）中合成的贫电子/精电子合金Ln_（5-x）Ca_xGe_（4）（Ln = La，Ce; x = 3.37，3.66，3.82; x = 3.00，3.20，3.26）。新合金扩展了富金属Zintl系统中从富电子到开壳层缺电子区的相宽度，并证明了由于其他现有结构形成因素，在Zintl相中可能发生各种电子缺陷而不发生结构变化。
We report for the first time the syntheses of electron-precise/deficient alloys, Ln5-xCaxGe4 (Ln = La, Ce; x = 3.37, 3.66, 3.82 for La; x = 3.00, 3.20, 3.26 for Ce), in the metal-rich R5Tt4 Zintl system (R = rare earth metal; Tt = Si, Ge). The new alloys extend the phase width from electron-rich to open-shell electron-deficient region in the metal-rich Zintl system and demonstrate possible occurrence of varied electron deficiencies in Zintl phases without structural changes, as a result of other existing structure-forming factors.