A Hybrid solid-state storage architecture for the performance, energy consumption, and lifetime improvement
A Hybrid solid-state storage architecture for the performance, energy consumption, and lifetime improvement
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DOI：
10.1109/hpca.2010.5416650
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发表时间：
2010-01
期刊：
影响因子：
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通讯作者：
Guangyu Sun;Yongsoo Joo;Yibo Chen;Dimin Niu;Yuan Xie;Yiran Chen;Hai Helen Li
中科院分区：
文献类型：
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作者：
Guangyu Sun;Yongsoo Joo;Yibo Chen;Dimin Niu;Yuan Xie;Yiran Chen;Hai Helen Li
近年来，许多系统都采用NAND闪存作为存储设备，因为它具有更高的性能（与传统硬盘驱动器相比）、高密度、随机存取、增加容量和降低成本等优点。另一方面，NAND闪存的性能受到其“先擦除后写入”要求的限制。基于日志的结构已用于通过将更新的数据写入干净空间来缓解此问题。然而，现有的基于日志的方法在频繁更新时无法避免过多的擦除操作，从而快速消耗空闲页，尤其是当某些数据被重复更新时。在本文中，我们提出了一种 NAND 闪存存储的混合架构，其中日志区域是使用相变随机存取存储器（PRAM）实现的。与传统的基于日志的架构相比，它具有以下优点：（1）PRAM日志区域允许就地更新，通过消除过时的日志记录，显着提高日志页的使用效率； (2)由于读取操作加载的日志大小减小，大大减少了从NAND闪存存储器读取的流量； (3)通过PRAM日志区域减少读写日志数据的开销，从而降低存储系统的能耗； (4)由于擦除操作的次数减少，所以NAND闪存的寿命增加。为了促进 PRAM 日志区域的发展，我们提出了几种管理策略。仿真结果表明，我们提出的方法可以显着提高 NAND 闪存存储的性能、能耗和寿命1。
In recent years, many systems have employed NAND flash memory as storage devices because of its advantages of higher performance (compared to the traditional hard disk drive), high-density, random-access, increasing capacity, and falling cost. On the other hand, the performance of NAND flash memory is limited by its “erase-before-write” requirement. Log-based structures have been used to alleviate this problem by writing updated data to the clean space. Prior log-based methods, however, cannot avoid excessive erase operations when there are frequent updates, which quickly consume free pages, especially when some data are updated repeatedly. In this paper, we propose a hybrid architecture for the NAND flash memory storage, of which the log region is implemented using phase change random access memory (PRAM). Compared to traditional log-based architectures, it has the following advantages: (1) the PRAM log region allows in-place updating so that it significantly improves the usage efficiency of log pages by eliminating out-of-date log records; (2) it greatly reduces the traffic of reading from the NAND flash memory storage since the size of logs loaded for the read operation is decreased; (3) the energy consumption of the storage system is reduced as the overhead of writing and reading log data is decreased with the PRAM log region; (4) the lifetime of NAND flash memory is increased because the number of erase operations are reduced. To facilitate the PRAM log region, we propose several management policies. The simulation results show that our proposed methods can substantially improve the performance, energy consumption, and lifetime of the NAND flash memory storage1.