Development of interference lithography for 22 nm node and below
Development of interference lithography for 22 nm node and below
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DOI：
10.1016/j.mee.2011.02.076
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发表时间：
2011-08-01
影响因子：
2.3
通讯作者：
Kinoshita, Hiroo
中科院分区：
文献类型：
--
作者：
Fukushima, Yasuyuki;Yamaguchi, Yuya;Kinoshita, Hiroo
NewSUBARU 的长波荡器光束线上安装了极紫外 (EUV) 干涉光刻曝光工具，以评估 25 nm 节点及以下节点的 EUV 光刻胶。采用溅射、电子束光刻、干法刻蚀和湿法刻蚀技术制备了40和50 nm半间距(hp)的双窗透射光栅。使用 EUV 干涉光刻曝光工具成功复制了化学放大抗蚀剂 (CAR) 和非 CAR 的 hp 图案（20 和 25 nm）。 (C) 2011 年由 Elsevier B.V. 出版
An extreme ultraviolet (EUV) interference lithographic exposure tool was installed at the long undulator beamline in NewSUBARU to evaluate EUV resists for 25 nm node and below. The two-window transmission grating of 40 and 50 nm half pitch (hp) were fabricated with techniques of spattering, electron beam lithography, dry etching and wet etching. hp patterns (20 and 25 nm) of chemically amplified resist (CAR) and non-CAR were successfully replicated using the EUV interference lithographic exposure tool. (C) 2011 Published by Elsevier B.V.