Modeling and simulation of single nanobelt SnO2 gas sensors with FET structure
Modeling and simulation of single nanobelt SnO2 gas sensors with FET structure
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DOI：
10.1016/j.snb.2007.06.009
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发表时间：
2007-12-12
影响因子：
8.4
通讯作者：
Xiong, P.
中科院分区：
文献类型：
--
作者：
Andrei, P.;Fields, L. L.;Xiong, P.
单独的二氧化锡纳米带用于制造场效应晶体管（FET）器件。这些设备的输出特性已被测量在各种环境条件下，并与修改后的漂移扩散模型，其中考虑到使用密度梯度模型的量子力学效应建模。结果表明，饱和的输出曲线（漏极电流与漏极-源极电压）在空气中不是由于沟道夹断，而是由于反向偏置电流的肖特基接触的饱和。在这种情况下，源极和漏极接触表现得像整流二极管，并且可以被建模为背靠背连接的两个肖特基二极管，其中串联电阻来自分离二极管的纳米带。在存在氢的情况下，两个接触的整流行为消失，并且通过器件的电流受到纳米带的电阻的限制，纳米带的电阻可以通过使用栅电极有效地调制。(c)2007 Elsevier B. V.保留所有权利。
Individual tin dioxide nanobelts were used to fabricate field-effect transistor (FET) devices. The output characteristics of these devices have been measured under various ambient conditions, and modeled with a modified drift-diffusion model in which quantum mechanical effects are taken into consideration using the density-gradient model. It is shown that the saturation of the output curves (drain current versus drain-to-source voltage) in air is not due to channel pinch-off, but rather to the saturation of the reversed-biased current of the Schottky-like contact. In this case the source and drain contacts behave like rectifying diodes and can be modeled as two Schottky diodes connected back-to-back with a series resistance from the nanobelt separating the diodes. In the presence of hydrogen the rectifying behavior of the two contacts disappears and the current through the device is limited by the resistance of the nanobelt that can be modulated efficiently by using a gate electrode. (c) 2007 Elsevier B.V. All rights reserved.