Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors
Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors
复制标题
n 型和 p 型金属氧化物半导体场效应晶体管栅极感应漏极漏电流中随机电报噪声的表征
DOI：
10.1063/1.3292204
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发表时间：
2010
影响因子：
4
通讯作者：
Jong
中科院分区：
文献类型：
--
作者：
Ju;Hyungcheol Shin;Jong
首次观察并分析了纳米级n型和p型金属氧化物半导体场效应晶体管（MOSFET）栅致漏漏电流中的随机电报噪声。从栅压和温度两个方面分析了载流子的俘获和发射几率。n型和pMOSFET的发射时间（τe）与VGS无关，但与温度密切相关，因为τe随温度升高的下降幅度大于n型和pMOSFET的捕获时间（τc）。随着VGS的增加，n和pMOSFET的τc减小。
Random telegraph noise in gate induced drain leakage current of nanoscale n- and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) was observed and analyzed for the first time. Capture and emission probability of carrier was analyzed in terms of gate voltage and temperature. The emission times (τe) in n and pMOSFETs have no dependence on VGS but are strongly dependent on temperature since the τe is decreased more significantly with increasing temperature than the capture time (τc) in n and pMOSFETs. As VGS increases, the τc in n and pMOSFETs decreases.