An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown
An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown
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DOI：
10.1109/jphot.2013.2272776
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发表时间：
2013-08-01
影响因子：
2.4
通讯作者：
Tan, Chee Hing
中科院分区：
文献类型：
--
作者：
Xie, Jingjing;Ng, Jo Shien;Tan, Chee Hing
在77 ~ 300 K温度范围内测量了AlAs0.56Sb0.44（以下简称AlAsSb）分立吸收倍增雪崩光电二极管（APD）的暗电流和雪崩增益M。为了避免由于边缘击穿和隧穿电流而导致的击穿电压的可能模糊性，采用了在器件中心具有紧密聚焦的光斑的相敏检测方法来精确测量M。采用1/M外推法推导出击穿电压，并由此推导出击穿电压温度系数C-bd。AlAsSb SAM APD的C-bd = 8 mV/K的值远小于商用Si和InGaAs/InP APD以及文献中的其他SAM APD的C-bd = 8 mV/K的值，表明AlAsSb雪崩区在改善APD的热稳定性方面的潜力。
Dark current and avalanche gain M on AlAs0.56Sb0.44 (hereafter referred to as AlAsSb) separate absorption multiplication (SAM) avalanche photodiodes (APDs) were measured at temperatures ranging from 77 K to 300 K. To avoid possible ambiguity in breakdown voltage due to edge breakdown and tunneling current, a phase-sensitive detection method with a tightly focused light spot in the center of the device was employed to measure M accurately. An extrapolation of 1/M to zero was used to deduce the breakdown voltage, from which the temperature coefficient of breakdown voltage C-bd was derived. The value of C-bd = 8 mV/K, obtained for AlAsSb SAM APDs, is much smaller than that for commercial Si and InGaAs/InP APDs, as well as other SAM APDs in the literature, demonstrating the potential of AlAsSb avalanche regions in improving the thermal stability of APDs.