Angle-resolved photoemission from surface states
Angle-resolved photoemission from surface states
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DOI：
10.1103/physrevlett.93.027601
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发表时间：
2004-07-09
影响因子：
8.6
通讯作者：
Schattke, W
中科院分区：
文献类型：
--
作者：
Krasovskii, EE;Schattke, W
揭示了未占据的复杂能带结构的渐逝部分在表面态光电子发射中的作用。在光电发射的从头一步理论中解释了在 40 至 110 eV 光子能量范围内，Al（100）和（111）表面上两个表面态的发射强度的频率依赖性。提出了一种确定表面状态的新颖嵌入方法。预测表面态光谱对表面势垒细节的高灵敏度，这提供了一种有效监测表面性质的方法。
The role of the evanescent part of the unoccupied complex band structure in photoemission from surface states is revealed. The frequency dependence of the emission intensity from two surface states on the (100) and (111) surfaces of Al in the photon energy range from 40 to 110 eV is explained within an ab initio one-step theory of photoemission. A novel embedding method to determine surface states is presented. A high sensitivity of surface states spectra to details of the surface potential barrier is predicted, which offers a way to efficiently monitor surface properties.