Ferroelectric Properties of Bi3.25La0.75 Ti3O12 Thin Films Crystallized in Different N2/O2 Ambients
Ferroelectric Properties of Bi3.25La0.75 Ti3O12 Thin Films Crystallized in Different N2/O2 Ambients
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DOI：
10.1088/0256-307x/26/4/047702
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发表时间：
2009-03
影响因子：
3.5
通讯作者：
Li Jianjun;Y. Jun;L. Jia;Yang Wei-ming;Zhou Bin;Gao Jun-xiong;Wang Yunbo
中科院分区：
文献类型：
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作者：
Li Jianjun;Y. Jun;L. Jia;Yang Wei-ming;Zhou Bin;Gao Jun-xiong;Wang Yunbo
采用溶胶-凝胶法沉积Bi3.25La0.75 Ti3O12 (BLT)铁电薄膜，并在总浓度为1sccm的不同比例的N2/O2混合气体中在750℃下退火结晶30分钟。研究了结晶环境对BLT薄膜结构和铁电性能的影响。研究表明 BLT 薄膜的生长方向和晶粒尺寸会影响铁电性能。 BLT薄膜在20％O2中退火后，获得最大的Pr值，这归因于随机取向的增加和大晶粒尺寸。随着环境中氧浓度的增加，疲劳性能得到改善，这是由于在高浓度氧环境中进行退火，充分减少了与缺氧有关的缺陷。
Bi3.25La0.75 Ti3O12 (BLT) ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total 1sccm N2/O2 mixed gas with various ratio at 750°C for 30 min. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroelectric properties. After the BLT film is annealed in 20% O2, the largest Pr value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.