Spin and phase coherence measured by antilocalization in n-InSb thin films
Spin and phase coherence measured by antilocalization in n-InSb thin films
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DOI：
10.1103/physrevb.79.075322
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发表时间：
2009-02-01
影响因子：
3.7
通讯作者：
Heremans, J. J.
中科院分区：
文献类型：
--
作者：
Kallaher, R. L.;Heremans, J. J.
通过分析反定域理论中的低温磁阻，实验确定了n-InSb薄膜中巡回电子的自旋和相位相干时间。结果表明，自旋相干时间在 10 K 以下时对温度的依赖性非常弱。自旋相干时间对载流子密度的依赖性表明，Elliott-Yafet 机制是低温下 n 型 InSb 中电子自旋弛豫的主要原因。根据电子-电子奈奎斯特移相机制，相位相干时间遵循反温度依赖性。
The spin and phase coherence times of the itinerant electrons in n-InSb thin films were experimentally determined by analyzing the low-temperature magnetoresistance in antilocalization theory. The results indicate a very weak temperature dependence below 10 K for the spin coherence time. The dependence of the spin coherence time on carrier density demonstrates that the Elliott-Yafet mechanism is predominantly responsible for electron-spin relaxation in n-type InSb at low temperatures. The phase coherence time follows an inverse temperature dependence, in accordance with the electron-electron Nyquist dephasing mechanism.