Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates
Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates
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DOI：
10.1021/nn9001566
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发表时间：
2009-06-01
期刊：
影响因子：
17.1
通讯作者：
Briones, F.
中科院分区：
文献类型：
--
作者：
Martin-Sanchez, J.;Munoz-Matutano, G.;Briones, F.
我们提出了一种制造方法来生产用于量子光学信息器件的位点控制且规则间隔的 InAs/GaAs 量子点。我们的外延再生长过程的高选择性可用于仅将量子点分配在由异位局部氧化原子力纳米光刻预先确定的位置。经过这种制造过程获得的量子点具有很高的光学质量，我们通过显微光致发光和光子相关实验对其进行了评估。
We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication process present a high optical quality which we have evaluated by microphotoluminescence and photon correlation experiments.