Structural and optical properties of nearly stress-free m-plane ZnO film on (1 0 0) γ-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition
Structural and optical properties of nearly stress-free m-plane ZnO film on (1 0 0) γ-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition
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DOI：
10.1016/j.apsusc.2009.06.127
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发表时间：
2009-08
影响因子：
6.7
通讯作者：
Hui Lin;Shengming Zhou;Hao Teng;Xiaorui Hou;Tingting Jia;S. Gu;Shunming Zhu;Z. Xie;P. Han;Rong Zhang;Ke Xu
中科院分区：
文献类型：
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作者：
Hui Lin;Shengming Zhou;Hao Teng;Xiaorui Hou;Tingting Jia;S. Gu;Shunming Zhu;Z. Xie;P. Han;Rong Zhang;Ke Xu
在(100)γ- lialo2 (100) γ- lialo2(101¯0)m平面上采用金属有机化学气相沉积的方法，在600℃下外延沉积了ZnO薄膜，并添加了GaN缓冲层。用x射线衍射法测定了ZnO与GaN、GaN与(100)γ- lialo2的外延关系Φ-scans。在拉曼光谱中，ZnO的e2模位移减小很小（0.3cm−1），这表明外延ZnO薄膜受到了轻微的拉伸应力（5.77×107Pa）。与高度应变的A平面ZnO不同，温度相关的光致发光光谱显示，当温度≤138K时，可以观察到自由的A出口发射。
(101¯0)m-plane ZnO film was epitaxially deposited on (100) γ-LiAlO2by metal-organic chemical vapor deposition at 600°C with a GaN buffer layer. The epitaxial relationships between ZnO and GaN, GaN and (100) γ-LiAlO2were determined by X-ray diffraction Φ-scans. There exhibits very small decrease for the E2mode shift (0.3cm−1) of ZnO in the Raman spectrum, which indicates the epitaxial ZnO film was under a slight tensile stress (5.77×107Pa). Unlike the highly strained a-plane ZnO, temperature dependent photoluminescence spectra show that the free A exiton emission was observed with the temperature ≤138K.