Nitrogen ion implantation into three-dimensional substrates by plasma source ion implantation
Nitrogen ion implantation into three-dimensional substrates by plasma source ion implantation
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DOI：
10.1016/s0254-0584(98)00053-4
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发表时间：
1998-07
影响因子：
4.6
通讯作者：
K. Baba;R. Hatada
中科院分区：
文献类型：
--
作者：
K. Baba;R. Hatada
研究了等离子体源离子注入(PSII)对304不锈钢球管、硅片和钛衬底的表面改性。氮等离子体由射频(13.56 MHz)辉光放电和ECR微波放电产生。用高压探头和电流互感器监测注入过程中的衬底偏置电压和电流。离子通过直接施加到基片上的高压脉冲(通常为-20千伏，100赫兹，50μS)从等离子体加速。利用X射线光电子能谱(XPS)、俄歇电子能谱(AES)和掠角X射线衍射仪(GXRD)对薄膜的表面和近表面进行了成分和结构表征。结果表明，PSII在不需要操控衬底的情况下，实现了均匀的离子注入三维衬底。此外，还对管内表面进行了离子注入。X射线光电子能谱(XPS)和X射线衍射仪(XRD)测量表明，钛衬底的注入表面存在钛的氮化物。
The surface modification of 304 stainless steel ball and tube, silicon wafer and titanium substrates by plasma source ion implantation (PSII) has been investigated. The nitrogen plasma was generated by a radio frequency (13.56 MHz) glow discharge and an ECR microwave discharge. The substrate bias voltage and current during implantation were monitored with a high voltage probe and a current transformer. Ions are accelerated from the plasma by a high voltage pulse (typically — 20 kV, 100 Hz, 50 μs) applied directly to the substrates. The compositional and structural characterization of the surface and near surface were carried out using X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and glancing angle X-ray diffraction (GXRD). The results show that uniform ion implantation into three-dimensional substrates was achieved by PSII without substrates manipulation. Furthermore ion implantation into the surface of the inside of the tube was performed. XPS and XRD measurements showed the presence of nitrides of titanium at the implanted surface for the Ti substrates.