Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film
Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film
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DOI：
10.7567/apex.6.075101
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发表时间：
2013-07-01
影响因子：
2.3
通讯作者：
Tsukagoshi, Kazuhito
中科院分区：
文献类型：
--
作者：
Ago, Hiroki;Kawahara, Kenji;Tsukagoshi, Kazuhito
采用常压化学气相沉积的方法，在c面蓝宝石衬底上沉积了一层薄的Cu(111)薄膜，外延生长了单层石墨烯的大六方单晶区。由于外延生长，最大尺寸为100微米的六方石墨烯微区沿同一方向取向。通过角度分辨光电子能谱观察到结晶度较高的Dirac能带结构，室温下在SiO_2/Si上获得了高达4,000 cm(2)V~(-1)S(-1)的高载流子迁移率。我们的外延方法与大域增长相结合，有望为未来的电子应用做出贡献。(C)2013年日本应用物理学会
Large hexagonal single-crystalline domains of single-layer graphene are epitaxially grown by ambient-pressure chemical vapor deposition over a thin Cu(111) film deposited on c-plane sapphire. The hexagonal graphene domains with a maximum size of 100 mu m are oriented in the same direction due to the epitaxial growth. Reflecting high crystallinity, a clear band structure with the Dirac cone is observed by angle-resolved photoelectron spectroscopy (ARPES), and a high carrier mobility exceeding 4,000 cm(2) V-1 s(-1) is obtained on SiO2/Si at room temperature. Our epitaxial approach combined with large domain growth is expected to contribute to future electronic applications. (C) 2013 The Japan Society of Applied Physics