Rearrangement of crystallographic domains driven by magnetic field in antiferromagnetic CoO
Rearrangement of crystallographic domains driven by magnetic field in antiferromagnetic CoO
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DOI：
10.1080/14786430903581296
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发表时间：
2010-05
影响因子：
1.6
通讯作者：
Masataka Yamamoto;T. Terai;T. Kakeshita
中科院分区：
文献类型：
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作者：
Masataka Yamamoto;T. Terai;T. Kakeshita
研究了CoO（Néel温度：293 K）中反铁磁赝四方晶系中畴在磁场驱动下的重排.在铁磁形状记忆合金中通常观察到重排。重排反应在170 K ~ 293 K之间发生，但在低于170 K时不发生。为了确定这种差异的原因，计算了由磁场驱动的剪切应力τ mag，并与孪生平面移动所需的剪切应力τ req进行了比较。结果表明，当磁场作用下晶体畴发生重排时，τ mag等于或大于τ req，反之亦然。这一观察结果与过去对许多铁磁形状记忆合金的观察结果相似。
The rearrangement was investigated of crystallographic domains in the antiferromagnetic pseudo-tetragonal phase in CoO (Néel temperature: 293 K) when the domains were driven by a magnetic field. A rearrangement is generally observed in ferromagnetic shape-memory alloys. The rearrangement was found to occur at temperatures between 170 K and 293 K, but not at temperatures below 170 K. In order to determine the reason for such a difference, the shear stress driven by a magnetic field, τ mag, was calculated and compared with the shear stress required for twinning plane movement, τ req. It was found that τ mag is equal to or larger than τ req whenever the rearrangement of crystallographic domains occurs due to the application of a magnetic field, and vice versa. This observation is similar to past observations in the case of many ferromagnetic shape-memory alloys.