Deposition Condition and Pinhole Defect Density of CrN x ( 1 ≧ x ≧ 0 ) Thin Films Formed by Ion-Beam-Enhanced Deposition
Deposition Condition and Pinhole Defect Density of CrN x ( 1 ≧ x ≧ 0 ) Thin Films Formed by Ion-Beam-Enhanced Deposition
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离子束增强沉积CrN x ( 1 ≧ x ≧ 0 ) 薄膜的沉积条件及针孔缺陷密度
DOI：
10.1149/1.1536993
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发表时间：
2003
影响因子：
3.9
通讯作者：
K. Sugimoto
中科院分区：
文献类型：
--
作者：
H. Kondo;N. Akao;N. Hara;K. Sugimoto
为了用离子束增强沉积方法制备具有低针孔缺陷密度的CrNx（1 ≥ x ≥ 0）薄膜，研究了N2气体流量、束流、加速器电压和增强源的束流电压等沉积条件对针孔缺陷密度的影响。在304不锈钢基体上沉积了CrNx薄膜，然后在0.05MH2SO4 + 0.005MKSCN溶液中测定了CrNx薄膜的阳极极化曲线。针孔缺陷密度由CrNx涂层钢的临界钝化电流密度与未涂层钢的临界钝化电流密度之比来评价。结果表明，针孔缺陷密度随增强源束流电压的增加而减小。针孔缺陷密度最低。0.005面积%。通过以下条件获得：N2流速5sccm。Ar流量3sccm，束流20mA。电子束电压200 V，加速器电压600 V，膜厚65 nm。
In order to produce a CrN x (1 ≥ x ≥ 0) thin film with a low pinhole defect density using an ion-beam-enhanced deposition method, the effect of deposition conditions, such as the N 2 gas flow rate, the beam current, the accelerator voltage, and the beam voltage of enhancement source, on the pinhole defect density was examined. CrN x thin films were deposited on type 304 stainless steel substrates, and then anodic polarization curves of CrN x -coated steels were measured in a deaerated 0.05 M H 2 SO 4 + 0.005 M KSCN solution. Pinhole defect density was evaluated by the ratio of the critical passivation current density of CrN x -coated steel to that of noncoated steel. It was found that the pinhole defect density was decreased with increasing the beam voltage of the enhancement source. The lowest pinhole defect density. 0.005 area %. was obtained by the following conditions: N 2 flow rate 5 seem. Ar flow rate 3 sccm, beam current 20 mA. beam voltage 200 V, accelerator voltage 600 V, and film thickness 65 nm.